Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/8003
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dc.contributor.authorIvakin, E.-
dc.contributor.authorKisialiou, I.-
dc.contributor.authorNykyruy, L.-
dc.contributor.authorYavorskyy, Ya.-
dc.contributor.authorНикируй, Любомир Іванович-
dc.date.accessioned2020-09-15T06:42:50Z-
dc.date.available2020-09-15T06:42:50Z-
dc.date.issued2018-12-01-
dc.identifier.citationIvakin, E.V., Kisialiou, I.G., Nykyruy, L.I. and Yavorskyy, Y.S., 2018. Optical Studies of Heat Transfer in PbTe: Bi (Sb) Thin Films. Semiconductors, 52(13), pp.1691-1695.uk_UA
dc.identifier.other10.1134/S1063782618130067-
dc.identifier.urihttp://hdl.handle.net/123456789/8003-
dc.description.abstractElectrical and thermal properties of lead-telluride films from 0.3 to 2.4 μm in thickness doped with antimony and bismuth, which were synthesized by thermal evaporation in vacuum, are investigated. Contact-free measurement of the in-plane thermal diffusivity is performed by the excitation of surface transient gratings and it is shown that the developed doping technology leads to a noticeable decrease in this heat-transfer parameter when compared with undoped PbTe. © 2018, Pleiades Publishing, Ltd.uk_UA
dc.description.sponsorshipState Fund for Fundamental Research of Ukraine; Belarusian Republican Foundation for Fundamental Research (F16K-054,F13K-063)uk_UA
dc.language.isoen_USuk_UA
dc.publisherSemiconductors (Pleiades Publishing)uk_UA
dc.subjectBismuth Tellurides, Thermoelectric, Antisite Defectsuk_UA
dc.titleOptical Studies of Heat Transfer in PbTe:Bi(Sb) Thin Filmsuk_UA
dc.typeArticleuk_UA
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