Features Potential Measurements in Submicron High Integral Circuits Structures Using Electro-Optical Effect in Liquid Crystals

Novosyadlyj, S.; Ivasuyk, R.; Kotyk, M.

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/5501

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DC Field	Value	Language
dc.contributor.author	Novosyadlyj, S.	-
dc.contributor.author	Ivasuyk, R.	-
dc.contributor.author	Kotyk, M.	-
dc.date.accessioned	2020-04-16T17:29:58Z	-
dc.date.available	2020-04-16T17:29:58Z	-
dc.date.issued	2017	-
dc.identifier.citation	Kotyk M, Features Potential Measurements in Submicron High Integral Circuits Structures Using Electro-Optical Effect in Liquid Crystals, S. Novosyadlyj, R. Ivasuyk, M. Kotyk,/ PHYSICS AND CHEMISTRY OF SOLIDSTATE – 2017, - V. 18, № 3 (2017) P. 376-381	uk_UA
dc.identifier.issn	1729-4428	-
dc.identifier.uri	http://hdl.handle.net/123456789/5501	-
dc.description.abstract	The quantitative values of electric potentials in the elements of submicron structures High Integral Circuits in the operating mode can be experimentally determined using electro-optic effect in nematics liquid crystal. This method relates to methods of diagnosing electronic structures of High Integral Circuits using Technical System and relates to the technology of Automated Design System and High Integral Circuits.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	ФІЗИКА І ХІМІЯ ТВЕРДОГО ТІЛА	uk_UA
dc.subject	liquid crystals	uk_UA
dc.subject	highly integrated circuit	uk_UA
dc.subject	automated design system	uk_UA
dc.subject	nematic liquid crystals	uk_UA
dc.subject	twisteffect	uk_UA
dc.title	Features Potential Measurements in Submicron High Integral Circuits Structures Using Electro-Optical Effect in Liquid Crystals	uk_UA
dc.title.alternative	Особливості вимірювання потенціалів в субмікронних структурах ВІС з використанням електрооптичного ефекту в рідких кристалах	uk_UA
dc.type	Article	uk_UA
Appears in Collections:	Статті та тези (ФТФ)

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