Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/3754
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dc.contributor.authorNovosiadlyi, Stepan-
dc.contributor.authorKotyk, M.-
dc.contributor.authorDzundza, B.-
dc.contributor.authorGryga, V.-
dc.contributor.authorNovosiadlyi, Svyatoslav-
dc.contributor.authorMandzyuk, V.-
dc.date.accessioned2020-04-02T08:00:18Z-
dc.date.available2020-04-02T08:00:18Z-
dc.date.issued2017-
dc.identifier.citationFormation of carbon films as the subgate dielectric of GaAs microcircuits on Si-substrates, / S. Novosiadlyi, M. Kotyk, B. Dzundza, V. Gryga, S. Novosiadlyi, V. Mandzyuk // EASTERN-EUROPEAN JOURNAL OF ENTERPRISE TECHNOLOGIES , Vol 5, No 5 (89) (2017).uk_UA
dc.identifier.issn1729-3774-
dc.identifier.urihttp://hdl.handle.net/123456789/3754-
dc.description.abstractThe technological aspects of the formation of thin α-C:H carbon films, the peculiarities of the ion-plasma Q-DLTS spectra of heterostructures α-C:H-Si and α-C: H-GaAs are considered, and activation energy, cross-trapping and density of deep traps, responsible for charge state, are determined. The correlation between the technological regimes of the α-C:H film formation and trap density is established. The technological methods and regimes that allow obtaining structures with a relatively small surface state density Nss≤1012 cm-2 are determined. This allows using these structures as a subgate dielectric in GaAs-CMOS structures of LSICs. Low-temperature epitaxy of GaAs-layers on silicon substrates with the use of excimer lasers is developed, where germanium film acts as a buffer layer between Si and GaAs. The technology of carbon films formation by deposition from the carbon target is developed. The use of carbon films as a subgate dielectric allows the formation of CMOS-transistors on GaAs-epilayers with symmetric threshold voltages, which opens a new direction for the development of the sub-micron technology of LSICs and enables to increase the LSICs speed and reduce their production cost.uk_UA
dc.language.isoenuk_UA
dc.publisherEASTERN-EUROPEAN JOURNAL OF ENTERPRISE TECHNOLOGIESuk_UA
dc.subjectcomplementary structuresuk_UA
dc.subjectheterostructuresuk_UA
dc.subjectepitaxyuk_UA
dc.subjectintegrated circuitsuk_UA
dc.subjecttechnological featuresuk_UA
dc.subjectcarbon filmsuk_UA
dc.titleFORMATION OF CARBON FILMS AS THE SUBGATE DIELECTRIC OF GAAS MICROCIRCUITS ON SI-SUBSTRATESuk_UA
dc.title.alternativeФОРМУВАННЯ КАРБОНОВИХ ПЛІВОК ЯК ПІДЗАТВОРНОГО ДІЕЛЕКТРИКА GaAs МІКРОСХЕМ НА Si-ПІДКЛАДКАХuk_UA
dc.typeArticleuk_UA
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