Quasichemical modelling of defect subsystem of tin telluride crystals

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DC Field	Value	Language
dc.contributor.author	Prokopiv, V.	-
dc.contributor.author	Turovska, L.	-
dc.contributor.author	Nykyruy, L.	-
dc.contributor.author	Horichok, I.	-
dc.date.accessioned	2020-03-30T15:14:37Z	-
dc.date.available	2020-03-30T15:14:37Z	-
dc.date.issued	2017-07	-
dc.identifier.citation	Prokopiv, V. V., Turovska, L. V., Nykyruy, L. I., & Horichok, I. V. (2016). Quasichemical modelling of defect subsystem of tin telluride crystals. Chalcogenide Letters, 13(7), 309-315.	uk_UA
dc.identifier.uri	http://hdl.handle.net/123456789/3023	-
dc.description.abstract	By the method of modelling with quasichemical reactions, formation of native atomic defects in tin telluride crystals has been described. Based on the analysis of electroneutrality condition, concentration dependences of charge carriers and point defects on the temperature and partial vapour pressure of tellurium have been found. The constants of corresponding reactions have been specified.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Chalcogenide Letters	uk_UA
dc.subject	Equilibrium constants; Point defects; Quasichemistry; Tin telluride; Two-temperature annealing	uk_UA
dc.title	Quasichemical modelling of defect subsystem of tin telluride crystals	uk_UA
dc.type	Article	uk_UA
Appears in Collections:	Статті та тези (ФТФ)

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