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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1621
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dc.contributor.authorIvanyshyn, Iryna-
dc.contributor.authorFreik, D.-
dc.contributor.authorGalushchak, M.-
dc.contributor.authorShperun, Volodymyr-
dc.contributor.authorZapukhlyak, Ruslan-
dc.contributor.authorPyts, Myhailo-
dc.date.accessioned2020-03-21T16:28:44Z-
dc.date.available2020-03-21T16:28:44Z-
dc.date.issued2000-
dc.identifier.citationFreik D.M., Galushchak M.O., Ivanyshyn I.M., Shperun V.M., Zapukhlyak R.I., Pyts M.V. Thermoelectric properties of solid solutions based on the Telluride of Tin // Semiconductor Physics. Quantum Electronics and Optoelectronics. 2000. V.3, №3. P. 287–290.uk_UA
dc.identifier.otherhttps://doi.org/10.15407/spqeo3.03-
dc.identifier.urihttp://hdl.handle.net/123456789/1621-
dc.description.abstractThe relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu2Te and SnTe-In2Te3: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism of the solid solutions formation are proposed. Showed is that at the expense of essential decreasing of a thermal conductivity factor in the solid solutions the improvement of the basic thermoelectric parameters of the material takes place. The compositions which have a maximum values of the thermoelectric Q-factor are retrieved.uk_UA
dc.language.isoenuk_UA
dc.publisherV. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraineuk_UA
dc.subjecttin telluride, solid solutions, thermoelectric parameters, crystaloquasichemical mechanismuk_UA
dc.titleThermoelectric properties of solid solutions based on the Telluride of Tinuk_UA
dc.typeArticleuk_UA
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