Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/10912

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DC Field	Value	Language
dc.contributor.author	Druzhinin, A.	-
dc.contributor.author	Kogut, I.	-
dc.contributor.author	Khoverko, Yu.	-
dc.contributor.author	Vuitsyk, A.	-
dc.date.accessioned	2021-09-23T11:19:57Z	-
dc.date.available	2021-09-23T11:19:57Z	-
dc.date.issued	2013	-
dc.identifier.citation	Druzhinin A. A. Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures / А. A. Druzhinin, І. Т. Kogut, Yu. N. Khoverko, А. N. Vuitsyk // Physics and Chemistry of Solid State. - 2013. - Vol. 14. - № 3. - P. 662-666.	uk_UA
dc.identifier.uri	http://hdl.handle.net/123456789/10912	-
dc.description.abstract	The studies of temperature dependence of conductivity and magnetoresistance of SOI-structures with polysilicon resistors with carrier concentration 2,4·1018 сm -3 before recrystallization in temperature range 4,2 – 300 K are presented. The dimensions of polysilicon resistor in SOI-structure are 80 mm × 8 mm × 0,5 mm.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Vasyl Stefanyk Precarpathian National University	uk_UA
dc.subject	SOI-structures	uk_UA
dc.subject	temperature	uk_UA
dc.title	Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures	uk_UA
dc.type	Article	uk_UA
Appears in Collections:	Т. 14, № 3

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