Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/10912

Title:	Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures
Authors:	Druzhinin, A. Kogut, I. Khoverko, Yu. Vuitsyk, A.
Keywords:	SOI-structures temperature
Issue Date:	2013
Publisher:	Vasyl Stefanyk Precarpathian National University
Citation:	Druzhinin A. A. Charge Carrier Transport of Polysilicon in SOI-Structures at Low Temperatures / А. A. Druzhinin, І. Т. Kogut, Yu. N. Khoverko, А. N. Vuitsyk // Physics and Chemistry of Solid State. - 2013. - Vol. 14. - № 3. - P. 662-666.
Abstract:	The studies of temperature dependence of conductivity and magnetoresistance of SOI-structures with polysilicon resistors with carrier concentration 2,4·1018 сm -3 before recrystallization in temperature range 4,2 – 300 K are presented. The dimensions of polysilicon resistor in SOI-structure are 80 mm × 8 mm × 0,5 mm.
URI:	http://hdl.handle.net/123456789/10912
Appears in Collections:	Т. 14, № 3

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