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http://hdl.handle.net/123456789/76
2024-03-29T12:33:01ZStructure Defects and Photovoltaic Properties of TiO2:ZnO/CuO Solar Cells Prepared by Reactive DC Magnetron Sputtering
http://hdl.handle.net/123456789/18690
Title: Structure Defects and Photovoltaic Properties of TiO2:ZnO/CuO Solar Cells Prepared by Reactive DC Magnetron Sputtering
Authors: Wisz, G.; Sawicka-Chudy, P.; Wal, A.; Sibiński, M.; Potera, P.; Yavorskyi, R.; Nykyruy, L.; Płoch, D.; Bester, M.; Cholewa, M.; Chernikova, O.; Яворський, Ростислав Святославович; Никируй, Любомир Іванович
Abstract: The problem of copper diffusion in semiconductor devices has been known for several decades as copper has been used as an interconnecting (bonding) metal and has been intensively studied due to its high diffusion coefficient. The influence of the intensive diffusion of copper, depending on the technology of the deposition regimes, has been investigated in thin-film solar cells based on copper, zinc, and titanium oxides obtained by DC-reactive magnetron sputtering. The observed effect significantly changes the structure of the CuO films and affects the properties of the TiO2:ZnO/CuO photocell. The composition of the layers and the copper diffusion in the photocells were studied using a cross-section obtained by scanning electron microscopy (SEM). The influence of the copper diffusion in the layers on the current–voltage (I-V) and power–voltage (P-V) characteristics and optical properties was investigated. The photoelectric behavior of two structures of thin-film solar cells was confirmed through -V research. The values of the open-circuit voltage (VOC) and short-circuit current density (JSC) of photovoltaic devices reached (11 ÷ 15) mV and (6.1 ÷ 6.8) μA, respectively. Furthermore, the Pmax, FF, RS, and RSH values were calculated and analyzed. The difference in the composition of the upper layer of the structure caused changes in the reflection spectra in the wavelength range of 190–2500 nm and, depending on the wavelength, varies in the range of 0–27%.2023-03-01T00:00:00ZOptical Properties of CdTe:In Thin Films Deposited by PVD Technique
http://hdl.handle.net/123456789/18689
Title: Optical Properties of CdTe:In Thin Films Deposited by PVD Technique
Authors: Vakaliuk, I.; Yavorskyi, R.; Naidych, B.; Nykyruy, L.; Katanova, L.; Zamuruieva, O.; Вакалюк, І. В.; Яворський, Ростислав Святославович; Найдич, Богдана Петрівна; Никируй, Любомир Іванович; Катанова, Л. О.
Abstract: CdTe:In thin films on glass substrates were obtained by physical vapor deposition. Thin films were obtained with different thicknesses (by setting of different deposition time τ) at the constant temperature of
substrate and temperature of evaporation. Identification of CdTe thin films was performed by the measurements of spectral distribution of optical transparency. Region of the fundamental absorption was observed in
the transmission spectra. The films are characterized by high transparency in near infrared region and moderate transmission coefficient which varies from 52 % to 85 %. All of the films demonstrated very sharp absorption edge near 800 nm. Moreover, observed interference in optical transparency spectra is an indication of
the uniform thickness of deposited films. The Swanepoel method is used to calculate maximum ТМ() and
minimum Tm() transmission curves by parabolic interpolation to experimentally determined positions of interference maxima and minima. Sharp increase of the refraction index at wavelengths 1000 nm is due to
decreased transmission near the fundamental absorption edge of thin films of indium-doped cadmium telluride. Main optical constants were determined, such as theoretical film thickness, refraction index, and absorption coefficient.2023-10-30T00:00:00ZModeling of integrated signal converters for biomedical sensor microsystems
http://hdl.handle.net/123456789/18688
Title: Modeling of integrated signal converters for biomedical sensor microsystems
Authors: Kogut, I.; Dzundza, B.; Holota, V.; Bulbuk, O.; Fedoriuk, V.; Nykyruy, L.; Никируй, Любомир Іванович
Abstract: The paper presents the results of computer modeling of the proposed functional-electrical circuit of integrated signal converters (ISC) from photosensitive elements based on CMOS operational amplifiers, which is intended for the construction of an element base of hybrid sensor microsystems for biomedical applications. A feature of this ISC is the regulation and filtering of the amplitude of the constant component in the amplified signal from the diode photosensitive element in the wave range of 400 - 1040 nm.
Computer simulation of the functioning of the device was carried out, the constituent components were determined and their parametric optimization was carried out. The results of experimental studies and computer modeling agree well, which confirms the correct functioning of the proposed signal converter from photosensitive elements. The developed ISC is suitable for creating real devices, both on the basis of discrete components and in an integrated design, as an element of sensor microsystems-on-a-chip or intelligent sensors.2023-09-25T00:00:00ZPeriodic nanostructures induced by point defects in Pb1-xSnxTe
http://hdl.handle.net/123456789/18687
Title: Periodic nanostructures induced by point defects in Pb1-xSnxTe
Authors: Saliy, Ya.; Nykyruy, L.; Cempura, G.; Soroka, O.; Parashchuk, T.; Horichok, I.; Никируй, Любомир Іванович
Abstract: Lead tin telluride solid solutions are excellent candidates for the p-type conduction legs of the thermoelectric generator modules. The investigation of their microstructure properties is an important issue, that can effectively modify their electronic and thermal transport properties. In this work, we show the experimental dependences of the Pb1-xSnxTe component distribution, which were identified as periodic nanostructures with an amplitude of λ ≈ 50-500 nm. The observed periodicity is explained by the generation and recombination of point defects due to diffusion processes during the synthesis, sintering, and annealing of samples. A model describing the formation of such inhomogeneities in Pb1-xSnxTe ternary alloys during isothermal annealing is proposed.2023-03-10T00:00:00Z